Abstract
Electronic Raman scattering has been investigated for metallic in which the 3d band filling (x) can be systematically changed from x=0 (a band insulator) to x=1 (a Mott-Hubbard insulator). The symmetry dependence of the scattering intensity can be accounted for in terms of the neutral carrier density fluctuation model. However, a systematic change of the spectral shape with the carrier density (≃x) is observed. All the spectra can be reproduced by a relaxational function with an ω-dependent scattering rate (Γ). The ω dependence of Γ gets stronger with x, which is in accord with the x-dependent enhancement of the effective mass, due to the electron correaltion effect.
- Received 28 October 1993
DOI:https://doi.org/10.1103/PhysRevB.49.4372
©1994 American Physical Society