Hall insulator in a two-dimensional electron system in silicon in the extreme quantum limit

We report diagonal- and Hall-resistance measurements of the localized two-dimensional electron system in silicon in the high-field extreme quantum limit. The Hall resistance has been found to be almost independent of temperature and close to its classical value, B/${\mathit{n}}_{\mathit{s}}$ec, while the diagonal resistivity diverges at T→0. There is no evidence for nonlocal resistance due to special conductivity paths. These results support existence of the recently predicted Hall insulator state in silicon in a high magnetic field.