Abstract
The electrical behavior of the ternary semiconductor is studied in the negative-differential-resistance region of its S-type I-V characteristic. Self-excited voltage oscillations in this region, with an amplitude of about 5 V were monitored at temperatures above 70 K. An analysis of the dynamic behavior of these oscillations by means of the Grassberger and Proccacia method shows the existence of two components in the signal, a quasiperiodic component and a chaotic component. Furthermore, this analysis leads to the estimation of fractal dimensions, minimum embedding dimensions and Kolmogorov entropies that characterize the two components.
- Received 21 March 1994
DOI:https://doi.org/10.1103/PhysRevB.49.16994
©1994 American Physical Society