Abstract
We present a combined experimental and theoretical investigation of shallow two-dimensional acceptor states in the presence of an external magnetic field for center-doped GaAs/As quantum wells (QW’s). The calculated 1()-2() transition energies of the acceptor state are in excellent agreement with our resonant Raman-scattering data. The g factors obtained from our calculations for varying well width of QW’s are also in good agreement with available experimental data. These results confirm the value of the Luttinger parameter κ=1.2±0.05 for bulk GaAs.
- Received 27 December 1993
DOI:https://doi.org/10.1103/PhysRevB.49.10794
©1994 American Physical Society