Abstract
The pressure dependence of vibrational Raman scattering in polycrystalline alloys is studied up to ∼100 kbar across the compositional range, and the mode Grüneisen parameters γ for the Si-Si, Ge-Ge, and Ge-Si optical phonons are determined from the Raman shifts. increases with the Ge fraction of the alloy and increases with the Si fraction. The dependence of the Raman shift on x and pressure is described by a modified cellular isodisplacement model of optical phonons. In particular, the predicted dependence of the Ge-Si mode frequency on alloy composition at ambient pressure is found to agree much better with experiment when the variation of the average Ge-Si bond length with alloy composition is included in this model.
- Received 16 February 1993
DOI:https://doi.org/10.1103/PhysRevB.48.2162
©1993 American Physical Society