Abstract
We report the observation, in a III-V semiconductor quantum-well structure, of free excitons with wave function mainly confined inside the barrier material GaAs. The confined-exciton energy falls between the fundamental level of the bulk three-dimensional exciton and its continuum of states. The confinement-energy values, obtained by an ad hoc designed luminescence self-absorption spectroscopy method, are consistent with the barrier parameters.
- Received 25 March 1993
DOI:https://doi.org/10.1103/PhysRevB.48.1643
©1993 American Physical Society