Abstract
In situ resistance changes of thin films during deposition were investigated at four different substrate temperatures in the 560–700 °C range. The shapes of the resistance curves with time and the measurement of deposition rates clearly indicated that the film grew epitaxially on the (100) substrate at 700 °C. Isothermal oxygen diffusion along the c-axis direction into the epitaxially grown thin films was investigated by monitoring in situ resistance changes in the 450–600 °C range; the apparent diffusion coefficients were (3.1–6.3)× /s. An Arrhenius plot of the diffusion coefficients in the 450–550 °C range gave an activation energy of 0.33 eV for oxygen diffusion plus a tetragonal-orthorhombic phase transition.
- Received 23 March 1992
DOI:https://doi.org/10.1103/PhysRevB.46.9142
©1992 American Physical Society