Influence of electronic parameters on the electric-field gradients induced by H at the probe atom ${}_{}{}^{111}{}_{}{}^{}\mathrm{In}$${/}^{111}$Cd in Si

The perturbed-γγ-angular-correlation technique (PAC) is a valuable tool for the characterization of defect complexes in crystalline materials. The features of the technique arising in the application to semiconductors are illustrated using the example of ${}_{}{}^{111}{}_{}{}^{}\mathrm{H}$ pairs in Si. This system was studied in the course of an investigation of the passivation of acceptors in Si by H. The consequences of the chemical transmutation of the radioactive probe atoms are discussed. Using Schottky-diode structures, it is shown that PAC is well suited for use in combination with electrical techniques. The PAC technique, which works at any temperature and over a wide range of dopant concentrations, is also sensitive to different charge states of the defect complexes formed. A discussion of the results focuses on the influence of electronic parameters on the electric-field gradient measured at the ${}_{}{}^{111}{}_{}{}^{}\mathrm{In}$${/}^{111}$Cd-H pairs in Si.