Abstract
Charge transport parallel to the layers of a modulation-doped GaAs/As heterostructure is studied theoretically. The heating of electrons by the applied electric field leads to real-space transfer of electrons from the GaAs into the adjacent As layer. For sufficiently large dc bias, spontaneous periodic 100-GHz current oscillations, and bistability and hysteretic switching transitions between oscillatory and stationary states are predicted. We present a detailed investigation of complex bifurcation scenarios as a function of the bias voltage and the load resistance . For large subcritical Hopf bifurcations and global bifurcations of limit cycles are displayed.
- Received 28 August 1991
DOI:https://doi.org/10.1103/PhysRevB.45.1935
©1992 American Physical Society