Production and identification of flux-pinning defects by electron irradiation in YBa2Cu3O7x single crystals

J. Giapintzakis, W. C. Lee, J. P. Rice, D. M. Ginsberg, I. M. Robertson, R. Wheeler, M. A. Kirk, and M.-O. Ruault
Phys. Rev. B 45, 10677 – Published 1 May 1992
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Abstract

An enhancement in Jc of YBa2Cu3O7x single crystals in a magnetic field is observed after irradiation with 1-MeV electrons. Typically, a factor-of-2 increase in Jc is deduced from magnetic hysteresis loops at 10 K and 1 T with Hc. This enhancement is about 1/2 of that produced by proton and neutron irradiations under similar measurement conditions. In situ transmission-electron-microscopy studies found no visible defects induced by electron irradiation, which means that point defects or small clusters (of size <2 nm) are responsible for the extra pinning. Annealing studies suggest that effective pinning centers for Hc do not include oxygen vacancies in the Cu-O chains. Based on calculations of cross sections for displacements on the different sublattices, and in conjunction with the results of a Jc calculation by Kes, we suggest that the most likely pinning defect is the displacement of a Cu atom from the CuO2-plane sites.

  • Received 19 December 1991

DOI:https://doi.org/10.1103/PhysRevB.45.10677

©1992 American Physical Society

Authors & Affiliations

J. Giapintzakis, W. C. Lee, J. P. Rice, D. M. Ginsberg, and I. M. Robertson

  • Department of Physics and Materials Research Laboratory, University of Illinois at Urbana-Champaign, 1110 West Green Street, Urbana, Illinois 61801

R. Wheeler and M. A. Kirk

  • Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439

M.-O. Ruault

  • Centre de Spectrome´trie Nucle´aire et de Spectrome´trie de Masse, Orsay, France

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Vol. 45, Iss. 18 — 1 May 1992

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