Abstract
The electronic structure of one-sided modulation-doped n-channel As/GaAs heterostructures has been studied by photoluminescence excitation spectroscopy in samples with a narrow (≊500 Å) active GaAs region. The excited two-dimensional (2D) electron states are observed optically at 2 K, and 2D hole quantization is also found to be important for the structure investigated. Theoretical calculations including exciton effects show good agreement with the experimental data.
- Received 20 September 1990
DOI:https://doi.org/10.1103/PhysRevB.43.5035
©1991 American Physical Society