Intersubband absorption line broadening in semiconductor quantum wells: Nonparabolicity contribution

M. Zal/użny
Phys. Rev. B 43, 4511 – Published 15 February 1991
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Abstract

The influence of the conduction-band nonparabolicity on the intersubband absorption line broadening in GaAs/AlxGa1xAs quantum wells is discussed in the framework of an empirical two-band model. In contrast with earlier papers, the influence of the depolarization effect on the absorption line shape is taken into account. The obtained results indicate that the contribution to the line broadening resulting from the nonparabolicity is, to a large extent, compensated for by the depolarization effect.

  • Received 8 August 1990

DOI:https://doi.org/10.1103/PhysRevB.43.4511

©1991 American Physical Society

Authors & Affiliations

M. Zal/użny

  • Institute of Physics, M. Curie-Skl/odowska University, 20-031 Lublin pl., M. Curie-Skl/odowskiej 1, Poland

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Issue

Vol. 43, Iss. 5 — 15 February 1991

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