Abstract
We present a detailed study of interface formation in the titanium-silicon (Ti-Si) system under different temperature conditions. We make use of electronic-structure calculations in order to interpret the silicon Si ,3VV Auger line shape and the electron-energy-loss spectra. These techniques, together with low-energy electron diffraction and electron-microscopy observations and film-resistance data, allow us to discuss accurately the interface reactivity of the Ti-Si system with respect to temperature.
- Received 3 August 1989
DOI:https://doi.org/10.1103/PhysRevB.41.3087
©1990 American Physical Society