Effect of inelastic scattering on impurity resistivity

L. Y. Chen, C. S. Ting, and N. J. M. Horing
Phys. Rev. B 40, 3756 – Published 15 August 1989
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Abstract

The standard impurity resistivity formula ρ=mλ2/Ne2〈τ〉 in the absence of phonons and electron-electron interactions is clearly understood to be derived under adiabatic conditions. Considering coupling to a heat bath of phonons, a charged carrier can interact with other carriers via the electron-phonon interaction and thus acquires a momentum-conserving inelastic scattering time τin. The attendant phonon-mediated electron-electron interaction promotes a tendency toward thermalization of the drifted system. On the basis of the force-balance-equation approach, we demonstrate that under isothermal conditions the impurity resistivity is devoid of the divergencies of van Hove’s ‘‘λ2t’’ series expansion. Electron-electron interactions will yield similar results. In the limit of τinτ (the impurity scattering time), the impurity resistivity reduces to the expression given by the lowest-order term in the force balance equation, ρ=(mλ2/Ne2)〈1/τ〉. We also show that this conclusion is consistent with results based upon the Boltzmann equation in a relaxation-time approximation.

  • Received 25 January 1989

DOI:https://doi.org/10.1103/PhysRevB.40.3756

©1989 American Physical Society

Authors & Affiliations

L. Y. Chen and C. S. Ting

  • Space Vacuum Epitaxy Center and Department of Physics, University of Houston, Houston, Texas 77204

N. J. M. Horing

  • Department of Physics and Engineering Physics, Stevens Institute of Technology, Hoboken, New Jersey 07030

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Vol. 40, Iss. 6 — 15 August 1989

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