Abstract
For the first time a calculation is made for the dispersion relations of electronic surface states of triple-constituent semiconductor superlattices, within the framework of an analytical model of interaction. An application is presented for a GaSb/AlSb/InAs polytype superlattice. We show that a new electronic surface transition occurs which is associated with In-derived surface states.
- Received 21 February 1989
DOI:https://doi.org/10.1103/PhysRevB.40.1175
©1989 American Physical Society