Electronic surface states in semiconductor superlattices: The case of a triple-constituent superlattice

P. Masri and M. D. Rahmani
Phys. Rev. B 40, 1175 – Published 15 July 1989
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Abstract

For the first time a calculation is made for the dispersion relations of electronic surface states of triple-constituent semiconductor superlattices, within the framework of an analytical model of interaction. An application is presented for a GaSb/AlSb/InAs polytype superlattice. We show that a new electronic surface transition occurs which is associated with In-derived surface states.

  • Received 21 February 1989

DOI:https://doi.org/10.1103/PhysRevB.40.1175

©1989 American Physical Society

Authors & Affiliations

P. Masri and M. D. Rahmani

  • Laboratoire d’Etudes des Surfaces, Interfaces et Composants, Université des Sciences et Techniques du Languedoc, place Eugène Bataillon, 34060 Montpellier CEDEX, France

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Vol. 40, Iss. 2 — 15 July 1989

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