Channeling radiation from GaAs

H. Park, J. O. Kephart, R. K. Klein, R. H. Pantell, B. L. Berman, and S. Datz
Phys. Rev. B 36, 1259 – Published 15 July 1987
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Abstract

Channeling-radiation spectra have been obtained from a GaAs crystal with 16.9-MeV electrons and with 54.4-MeV electrons and positrons. Theoretical calculations are in reasonably good agreement with the experimental results.

  • Received 29 January 1987

DOI:https://doi.org/10.1103/PhysRevB.36.1259

©1987 American Physical Society

Authors & Affiliations

H. Park, J. O. Kephart, R. K. Klein, and R. H. Pantell

  • Department of Electrical Engineering, Stanford University, Stanford, California 94305

B. L. Berman

  • Lawrence Livermore National Laboratory, University of California, Livermore, California 94550 and Department of Physics, The George Washington University, Washington, D.C. 20052

S. Datz

  • Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830

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Vol. 36, Iss. 2 — 15 July 1987

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