de Haas<i>–</i>van Alphen effect in <span class="aps-inline-formula"><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><mrow><msub><mrow><mi mathvariant="normal">MoSi</mi></mrow><mrow><mn>2</mn></mrow></msub></mrow></math></span>

J. M. van Ruitenbeek; W. Joss; R. Pauthenet; O. Thomas; J. P. Senateur; R. Madar

doi:10.1103/PhysRevB.35.7936

de Haas–van Alphen effect in ${MoSi}_{2}$

J. M. van Ruitenbeek, W. Joss, R. Pauthenet, O. Thomas, J. P. Senateur, and R. Madar

Phys. Rev. B 35, 7936 – Published 15 May 1987

Abstract

A complete Fermi-surface study of ${MoSi}_{2}$ is presented. One electron sheet and one hole sheet of equal volume are found. The number of electrons (holes) is 0.030 particles per formula unit. The results compare well with the result of a recent band-structure calculation by Bhattacharyya, Bylander, and Kleinman after shifting the Fermi level by -50 meV.

Received 24 November 1986

DOI:https://doi.org/10.1103/PhysRevB.35.7936

Authors & Affiliations

J. M. van Ruitenbeek and W. Joss

Hochfeld Magnetlabor, Max-Planck-Institut für Festkörperforschung, Bote Postale 166X, F-38042 Grenoble Cédex, France

R. Pauthenet

Laboratoire Louis Néel et Service National des Champs Intenses du Centre National de la Recherche Scientifique, Bote Postale 166X, F-38042 Grenoble Cédex, France

O. Thomas, J. P. Senateur, and R. Madar

Ecole Nationale Supérieure de Physique de Grenoble, Bote Postale 46, F-38402 Saint-Martin-d’ Hères, France

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Vol. 35, Iss. 15 — 15 May 1987

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