Abstract
We have grown thin films of silicon nitride by remote plasma-enhanced chemical-vapor deposition and have studied the chemical bonding by infrared absorption, x-ray photoelectron spectroscopy, Rutherford backscattering, and Auger-electron spectroscopy. Films were grown using two different gases as the source of nitrogen, and . We have found that films grown from and deposited at substrate temperatures in excess of 350 °C have a composition corresponding to stoichiometric , whereas films deposited from require substrate temperatures in excess of about 500 °C to eliminate bonded H and yield the same stoichiometric composition. In contrast films grown from at temperatures in the range of 50 to 100 °C have a chemical composition corresponding to silicon diimide, Si(NH. Films grown from at intermediate substrate temperatures are solid solutions of and Si(NH.
- Received 2 January 1986
DOI:https://doi.org/10.1103/PhysRevB.33.7069
©1986 American Physical Society