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Diffuse interface model of diffusion-limited crystal growth

Joseph B. Collins and Herbert Levine
Phys. Rev. B 31, 6119(R) – Published 1 May 1985; Erratum Phys. Rev. B 33, 2020 (1986)
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Abstract

A general approach to diffusion-limited crystal growth is proposed. It consists of a modified (nonequilibrium) Cahn-Hilliard representation of the interface coupled to a diffusion equation. Arguments are given as to its superiority over previous models. These are illlustrated in a one-dimensional solution which shows how the system selects a unique interface velocity. The selection can be interpreted as the requirement of consistency between the interfacial undercooling as determined by the (microscopic) kinetics and as determined by the (macroscopic) diffusion equation.

  • Received 11 February 1985

DOI:https://doi.org/10.1103/PhysRevB.31.6119

©1985 American Physical Society

Erratum

Erratum: Diffuse interface model of diffusion-limited crystal growth

Joseph B. Collins and Herbert Levine
Phys. Rev. B 33, 2020 (1986)

Authors & Affiliations

Joseph B. Collins

  • Department of Physics, Brown University, Providence, Rhode Island 02912

Herbert Levine

  • Schlumberger-Doll Research, Old Quarry Road, Ridgefield, Connecticut 06877-4108

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Issue

Vol. 31, Iss. 9 — 1 May 1985

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