Alloy scattering in quantum-well structures of semiconductor ternaries

An expression for the relaxation time due to alloy scattering in the quantum-well structure of a semiconductor ternary is derived. The resulting mobility of the two-dimensional electron gas in the well is found to be independent of temperature. Considering ${\mathrm{Ge}}_{0.47}$${\mathrm{In}}_{0.53}$As, it is shown that the alloy-scattering mobility in a thick quantum well may exceed that in a highly degenerate bulk material at not too low temperatures.