Abstract
Using a valence force field, we predict the symmetric lattice distortions around isovalent impurities in 64 semiconductor-impurity systems. For the five systems for which extended x-ray absorption fine-structure (EXAFS) data are available, the results are in excellent agreement with experiment. Our theory also explains quantitatively, without adjustable parameters, the observed bond-length variations in solid solutions of semiconductor alloys, as well as their excess enthalpies of mixing.
- Received 11 June 1984
DOI:https://doi.org/10.1103/PhysRevB.30.6217
©1984 American Physical Society