Multiplet splitting of final-state configurations in x-ray-absorption spectrum of metal VO2: Effect of core-hole-screening, electron correlation, and metal-insulator transition

Antonio Bianconi
Phys. Rev. B 26, 2741 – Published 15 September 1982
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Abstract

X-ray-absorption K-edge spectra of the V 1s core level in VO2 exhibit broadening and splitting of the 1st2g core transition at the K threshold at the semiconductor-to-metal phase transition. The three components observed in the metallic phase are assigned to final-state configurations characterized by different occupation numbers of the localized d band at the Fermi level: d2, d1, and d0. In the low-temperature semiconducting phase only the d1 final-state configuration is present. This experiment shows the core-hole-induced relaxation in x-ray-absorption spectroscopy of a narrow-band metal, where electron correlation is not negligible.

  • Received 26 February 1982

DOI:https://doi.org/10.1103/PhysRevB.26.2741

©1982 American Physical Society

Authors & Affiliations

Antonio Bianconi

  • Istituto di Fisica, Università di Roma, I-00185 Rome, Italy

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Vol. 26, Iss. 6 — 15 September 1982

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