Abstract
Uniaxial stress has been used to study the isotropic Cr-related EPR center in -type GaAs: Cr. Stress linearly splits the EPR line into two components, showing that the center is due to substitutional rather than interstitial . The stress coefficients are and [in units of /(dyn/)], with only relative signs known.
- Received 17 May 1982
DOI:https://doi.org/10.1103/PhysRevB.26.2296
©1982 American Physical Society