Abstract
Band-gap narrowing has been measured optically for semiconducting zinc-oxide films. All films were type with carrier densities of 5 × - 2 × . The narrowing appeared suddenly at , a carrier density consistent with that expected for the onset of a semiconductor-metal transition. However the gap-shrinkage dependence on carrier concentration was not as expected from predictions based on an electron-gas model, but could be described by the same empirical relation proposed for Si:As and Si:B.
- Received 2 December 1981
DOI:https://doi.org/10.1103/PhysRevB.25.7836
©1982 American Physical Society