Abstract
For the system of electrons in the Si metal-oxide—semiconductor inversion layer, the corrections to Stern's Hartree approximation due to the exchange and the electron-electron residual interactions are worked out for the ranges of temperature K and the surface electron density . It is found that the electrons in a subband and with a momentum parallel to the Si surface has a broadened distribution in energy as measured from the chemical potential, such that their state density is given by ; the peaks of the electron number distribution are shifted to the lower-energy side as compared with the corresponding peaks of the state density and, remarkably, their spacings are almost identical with those of the Hartree subband bottoms. The widths are as large as and the spacings of the peaks of the electron number distribution. The perturbation calculation requires respecting the charge neutrality condition, which can only be satisfied by taking into account the charges on the gate electrode that has been out of consideration so far.
- Received 17 March 1980
DOI:https://doi.org/10.1103/PhysRevB.22.1892
©1980 American Physical Society