Fermi-surface parameters of p-type PbTe as a function of carrier density

J. D. Jensen, Bland Houston, and J. R. Burke
Phys. Rev. B 18, 5567 – Published 15 November 1978
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Abstract

Nine samples of p-type PbTe were studied. Carrier densities, as determined by the high-field Hall coefficient at 4.2 K, ranged from 4.0×1017 to 4.5×1019 cm3. The corresponding conductivity mobilities decreased from 704 000 to 12 500 cm2/V sec. Shubnikov-de Haas oscillations were measured for the magnetic field H in the (11¯0) and (001) planes. The component frequencies were determined by Fourier analysis. The angular dependence of these frequencies was fitted by an ellipsoid of revolution model. For all carrier densities except the highest, this model was found to be adequate. In contrast to most previous work, large enough frequencies were measured to determine the anisotropy accurately. For all carrier densities up to and including 1.1×1019 cm3, K=13±1. The cyclotron effective mass mt was measured for H[111]. It was found to increase from 0.035m0 at 2.0×1018 cm3 to 0.072m0 at 4.5×1019 cm3. Over this same range, the ratio of spin splitting to Landau level separation was about 0.60 independent of carrier density, and the corresponding g value showed a modest decrease.

  • Received 5 July 1978

DOI:https://doi.org/10.1103/PhysRevB.18.5567

©1978 American Physical Society

Authors & Affiliations

J. D. Jensen, Bland Houston, and J. R. Burke*

  • Naval Surface Weapons Center, White Oak, Silver Spring, Maryland 20910

  • *Present address: Dept. of Energy, 20 Massachusetts Ave. NW, Wash., D.C. 20545.

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Vol. 18, Iss. 10 — 15 November 1978

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