Abstract
We have shown that, using a general class of Hamiltonians, the transfer-matrix technique may be used to obtain exact solutions for the electronic states at any crystal surface bounded by semi-infinite bulk. This result is formally generalized as a theorem and is used to study the electronic states at a clean GaAs (110) surface. The calculation employs an empirical tight-binding Hamiltonian which realistically models the GaAs surface and allows meaningful comparison with both experiments and self-consistent pseudopotential calculations. Surface states are calculated for the clean (110) surface, and a variety of structural relaxations are studied.
- Received 4 May 1977
DOI:https://doi.org/10.1103/PhysRevB.17.1816
©1978 American Physical Society