Effect of electron-hole pairs on phonon frequencies in Si related to temperature dependence of band gaps

V. Heine and J. A. Van Vechten
Phys. Rev. B 13, 1622 – Published 15 February 1976
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Abstract

The direct and indirect gaps between valence and conduction bands in semiconductors usually decrease with temperature. This effect is related by thermodynamic identities to the influence of electron-hole pairs on the lattice vibration frequencies. We show that the surprisingly large magnitude of the effect in Si and similar semiconductors is related to the sensitivity of the transverse-acoustic modes to covalent bonding. We are able to account for the magnitude of the effect from zero to the melting temperature. We also account for anomalous temperature variation in HgTe and related cases and mention other applications of the theory.

  • Received 30 June 1975

DOI:https://doi.org/10.1103/PhysRevB.13.1622

©1976 American Physical Society

Authors & Affiliations

V. Heine*

  • Cavendish Laboratory, University of Cambridge, Cambridge, England

J. A. Van Vechten*

  • IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598

  • *Portions of this work were completed while the authors were at Bell Laboratories, Murray Hill, N. J.

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Vol. 13, Iss. 4 — 15 February 1976

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