• Letter

Intrinsic spin-orbit torque mechanism for deterministic all-electric switching of noncollinear antiferromagnets

Yiyuan Chen, Z. Z. Du, Hai-Zhou Lu, and X. C. Xie
Phys. Rev. B 109, L121115 – Published 27 March 2024

Abstract

Using a pure electric current to control kagome noncollinear antiferromagnets is promising in information storage and processing, but a full description is still lacking, in particular, on intrinsic (i.e., no external magnetic fields or external spin currents) spin-orbit torques. In this work, we self-consistently describe the relations among the electronic structure, magnetic structure, spin accumulations, and intrinsic spin-orbit torques in the magnetic dynamics of a noncollinear antiferromagnet driven by a pure electric current. Our calculation can yield a critical current density comparable with those in the experiments, when considering the boost from the out-of-plane magnetic dynamics induced by the current-driven spin accumulation on individual magnetic moments. We stress the parity symmetry breaking in deterministic switching among magnetic structures. This work will be helpful for future applications of noncollinear antiferromagnets.

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  • Received 15 March 2023
  • Revised 11 September 2023
  • Accepted 1 March 2024

DOI:https://doi.org/10.1103/PhysRevB.109.L121115

©2024 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Yiyuan Chen1,2,3,4,*, Z. Z. Du1,3,4,*, Hai-Zhou Lu1,2,3,4,†, and X. C. Xie5,6,7

  • 1Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology (SUSTech), Shenzhen 518055, China
  • 2Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area (Guangdong), Shenzhen 518045, China
  • 3Shenzhen Key Laboratory of Quantum Science and Engineering, Shenzhen 518055, China
  • 4International Quantum Academy, Shenzhen 518048, China
  • 5International Center for Quantum Materials, School of Physics, Peking University, Beijing100871, China
  • 6Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
  • 7Hefei National Laboratory, Hefei 230088, China

  • *These authors contributed equally to this work.
  • Corresponding author: luhz@sustech.edu.cn

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Issue

Vol. 109, Iss. 12 — 15 March 2024

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