Vacancy-induced giant photogalvanic effect in TiSe2 heterojunctions

Yuan Li, Xinyu Cheng, Ying Ding, Longfei Guo, Tianchen Wang, Gaofeng Xu, and Wu-Ming Liu
Phys. Rev. B 109, 165438 – Published 25 April 2024

Abstract

We adopt nonequilibrium Green's functions and density functional theory to study the effect of Se atom defects on the transport properties and the photocurrent of a 1TTiSe2 heterojunction. We calculate the photocurrent for two types of defect configurations under the excitation of the linearly polarized light. The results show that Se1 and Se2 vacancy defects can induce large photocurrents, which are explained in terms of the transmission spectrum. The photocurrent shows anisotropic behaviors for different illuminated directions. Meanwhile, the extinction ratio reflecting the polarization sensitivity can reach a maximum value of 445.12. The photoresponsivities of the device with vacancy defects can have relatively large values in certain energy ranges. The 1TTiSe2-based device is a promising candidate for anisotropic light detection.

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  • Received 15 August 2023
  • Revised 4 February 2024
  • Accepted 27 March 2024

DOI:https://doi.org/10.1103/PhysRevB.109.165438

©2024 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Yuan Li1,*, Xinyu Cheng1, Ying Ding1, Longfei Guo1, Tianchen Wang1, Gaofeng Xu1,†, and Wu-Ming Liu2,‡

  • 1Department of Physics, Hangzhou Dianzi University, Hangzhou, Zhejiang 310018, China
  • 2Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

  • *liyuan@hdu.edu.cn
  • xug@hdu.edu.cn
  • wmliu@iphy.ac.cn

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Issue

Vol. 109, Iss. 16 — 15 April 2024

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