Abstract
We present an experimental protocol using cathodoluminescence measurements as a function of the electron incident energy to study both exciton diffusion in a directional way and surface exciton recombination. Our approach overcomes the challenges of anisotropic diffusion and the limited applicability of existing methods to the bulk counterparts of two-dimensional (2D) materials. The protocol is then applied at room and at cryogenic temperatures to four bulk hexagonal boron nitride crystals grown by different synthesis routes. The exciton diffusivity depends on the sample quality but not on the temperature, indicating it is limited by defect scattering even in the best quality crystals. The lower limit for the diffusivity by phonon scattering is 0.2 . Diffusion lengths were as much as 570 nm. Finally, the surface recombination velocity exceeds , at a level similar to silicon or diamond. This result reveals that surface recombination could strongly limit light-emitting devices based on 2D materials.
1 More- Received 11 August 2023
- Revised 23 March 2024
- Accepted 26 March 2024
DOI:https://doi.org/10.1103/PhysRevB.109.155305
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