Bulk superconductivity in Pb-substituted BiS2-based compounds studied by hard x-ray spectroscopy

A. Yamasaki, T. Oguni, T. Hayashida, K. Miyazaki, N. Tanaka, K. Nakagawa, K. Tamura, K. Mimura, N. Kawamura, H. Fujiwara, G. Nozue, A. Ose, Y. Kanai-Nakata, A. Higashiya, S. Hamamoto, K. Tamasaku, M. Yabashi, T. Ishikawa, S. Imada, A. Sekiyama, H. Sakata, and S. Demura
Phys. Rev. B 109, 045131 – Published 17 January 2024

Abstract

In this study, we investigate the bulk electronic structure of Pb-substituted LaO0.5F0.5BiS2 single crystals, using two types of hard x-ray spectroscopy. High-energy-resolution fluorescence-detected x-ray absorption spectroscopy revealed a spectral change at low temperatures. Using density functional theory (DFT) simulations, we find that the temperature-induced change originates from a structural phase transition, similar to the pressure-induced transition in LaO0.5F0.5BiS2. This finding suggests that the mechanism of bulk superconductivity induced by Pb substitution is the same as that under high pressure. Furthermore, a low-valence state with a mixture of divalent and trivalent Bi ions is discovered using hard x-ray photoemission spectroscopy with the aid of DFT calculations.

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  • Received 26 May 2023
  • Revised 24 November 2023
  • Accepted 2 January 2024

DOI:https://doi.org/10.1103/PhysRevB.109.045131

©2024 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

A. Yamasaki1,2,*, T. Oguni3, T. Hayashida2,3, K. Miyazaki2,3, N. Tanaka2,3, K. Nakagawa2,3, K. Tamura4, K. Mimura4,5, N. Kawamura6, H. Fujiwara2,7,8, G. Nozue2,7, A. Ose2,7, Y. Kanai-Nakata2,9, A. Higashiya2,10, S. Hamamoto2, K. Tamasaku2, M. Yabashi2, T. Ishikawa2, S. Imada2,9, A. Sekiyama2,7,8, H. Sakata11, and S. Demura12

  • 1Faculty of Science and Engineering, Konan University, Kobe 658-8501, Japan
  • 2RIKEN SPring-8 Center, Sayo, Hyogo 679-5148, Japan
  • 3Graduate School of Natural Science, Konan University, Kobe 658-8501, Japan
  • 4Graduate School of Engineering, Osaka Prefecture University, Sakai, Osaka 599-8531, Japan
  • 5Graduate School of Engineering, Osaka Metropolitan University, Sakai, Osaka 599-8531, Japan
  • 6Japan Synchrotron Radiation Research Institute, Sayo, Hyogo 679-5198, Japan
  • 7Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan
  • 8Spintronics Research Network Division, Institute for Open and Transdisciplinary Research Initiatives, Osaka University, Suita, Osaka 565-0871, Japan
  • 9College of Science and Engineering, Ritsumeikan University, Kusatsu, Shiga 525-8577, Japan
  • 10Faculty of Science and Engineering, Setsunan University, Neyagawa, Osaka 572-8508, Japan
  • 11Department of Physics, Tokyo University of Science, Tokyo 162-8601, Japan
  • 12College of Science and Technology, Nihon University, Tokyo 101-8308, Japan

  • *Corresponding author: yamasaki@konan-u.ac.jp

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Vol. 109, Iss. 4 — 15 January 2024

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