Coherent acoustic phonon dynamics facilitating acoustic deformation potential characterization of Mg3Sb2

Pengbo Ding, Yifan Zhu, Zhijia Han, Long Li, Liang Zhang, Yuhang Cai, David J. Singh, Lenan Zhang, Wenqing Zhang, Sunmi Shin, Jiong Yang, Weishu Liu, and Liang Guo
Phys. Rev. B 108, 064310 – Published 21 August 2023
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Abstract

Acoustic deformation potential (ADP) quantifies carrier-acoustic phonon coupling and is essential for dissecting transport physics in thermoelectrics. Herein, we report the use of ultrafast spectroscopy of coherent acoustic phonons (CAPs) to characterize the ADP of thermoelectric materials, using Mg3Sb2 as an example. The photon energy-dependent amplitudes of the CAP-induced oscillatory reflectance were used to determine the ADP coupling constant, agreeing well with that from first-principles calculations. This method relies on the transient Coulombic interaction between carriers and acoustic phonons, free of influence from other scattering channels. It is shown that the method is particularly feasible for the study of thermoelectric materials, because their common features of strong phonon anharmonicity and small band gaps make the measurement insensitive to the uncertainty of carrier diffusion coefficients, ensuring its accuracy.

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  • Received 4 July 2022
  • Revised 6 August 2023
  • Accepted 7 August 2023

DOI:https://doi.org/10.1103/PhysRevB.108.064310

©2023 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Pengbo Ding1,*, Yifan Zhu2,*, Zhijia Han3,*, Long Li1,4, Liang Zhang1,5, Yuhang Cai1, David J. Singh6, Lenan Zhang7, Wenqing Zhang3, Sunmi Shin5, Jiong Yang8,9,†, Weishu Liu3,‡, and Liang Guo1,§

  • 1Department of Mechanical and Energy Engineering, Southern University of Science and Technology, Shenzhen, China
  • 2State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, China
  • 3Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, China
  • 4School of Microelectronics, Shenzhen Institute of Information Technology, Shenzhen, China
  • 5Department of Mechanical Engineering, National University of Singapore, Singapore
  • 6Department of Physics and Astronomy, University of Missouri, Columbia, Missouri 65211, USA
  • 7Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
  • 8Materials Genome Institute, Shanghai University, Shanghai, China
  • 9Zhejiang Laboratory, Hangzhou, Zhejiang, China

  • *These authors contributed equally to this work.
  • Corresponding author: jiongy@t.shu.edu.cn
  • Corresponding author: liuws@sustech.edu.cn
  • §Corresponding author: guol3@sustech.edu.cn

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Issue

Vol. 108, Iss. 6 — 1 August 2023

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