• Letter

Topological and disorder corrections to the transverse Wiedemann-Franz law and Mott relation in kagome magnets and Dirac materials

Xiao-Bin Qiang, Z. Z. Du, Hai-Zhou Lu, and X. C. Xie
Phys. Rev. B 107, L161302 – Published 26 April 2023
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Abstract

The Wiedemann-Franz law and Mott relation are textbook paradigms on the ratios of the thermal and thermoelectric conductivities to electrical conductivity, respectively. Deviations from them usually reveal insights for intriguing phases of matter. The recent topological kagome magnets TbMn6Sn6 and Mn3Ge show confusingly opposite derivations in the Hall measurement. We calculate the topological and disorder corrections to the Wiedemann-Franz law and Mott relation for the Hall responses in topological kagome magnets and Dirac materials. The calculation indicates the dominance of the topological correction in the experiments. More importantly, we derive analytic correction formulas, which can universally capture the two opposite experiments with the chemical potential as the only parameter and will be a powerful guidance for future explorations on the magnetic topological matter and Dirac materials.

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  • Received 25 September 2022
  • Revised 9 April 2023
  • Accepted 10 April 2023
  • Corrected 23 May 2023

DOI:https://doi.org/10.1103/PhysRevB.107.L161302

©2023 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Corrections

23 May 2023

Correction: A typographical error in first grant number in the Acknowledgments has been fixed.

Authors & Affiliations

Xiao-Bin Qiang1,2,3,4, Z. Z. Du1,3,4, Hai-Zhou Lu1,2,3,4,*, and X. C. Xie5,6,7

  • 1Shenzhen Institute for Quantum Science and Engineering and Department of Physics, Southern University of Science and Technology (SUSTech), Shenzhen 518055, China
  • 2Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area (Guangdong), Shenzhen 518045, China
  • 3Shenzhen Key Laboratory of Quantum Science and Engineering, Shenzhen 518055, China
  • 4International Quantum Academy, Shenzhen 518048, China
  • 5International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
  • 6Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
  • 7Hefei National Laboratory, Hefei 230088, China

  • *Corresponding author: luhz@sustech.edu.cn

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Issue

Vol. 107, Iss. 16 — 15 April 2023

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