Abstract
The application of gate voltages in heavy metal/ferromagnet/oxide multilayer stacks has been identified as one possible candidate to manipulate their anisotropy at will. However, this method has proven to show a wide variety of behaviors in terms of reversibility, depending on the nature of the metal/oxide interface and its degree of oxidation. In order to shed light on the microscopic mechanism governing the complex magneto-ionic behavior in , we perform ab initio simulations on various setups comprising Fe/O and interfaces with different oxygen atom interfacial geometries. After the determination of the more stable interfacial configurations, we calculate the magnetocrystalline anisotropy energy on the different unit cell configurations and formulate a possible mechanism that well describes the recent experimental observations in .
- Received 8 February 2022
- Revised 6 March 2023
- Accepted 12 April 2023
DOI:https://doi.org/10.1103/PhysRevB.107.174413
Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.
Published by the American Physical Society