Abstract
In this work, we report on electron spin resonance studies of H atoms stabilized in solid films at temperature and and in a magnetic field of . We produced H atoms by two different techniques: bombarding films by electrons generated during an rf discharge run in the sample cell or exposing films to a flux of electrons released during tritium decay. We observed a faster H atom accumulation in the films made of gas with a small initial ortho- content (0.2–3%) as compared with those made from the gas with a higher initial ortho- admixture. The accumulation rate difference was about 70% for the samples exposed to high energy electrons and about an order of magnitude for the samples bombarded by low-energy electrons. We propose possible explanations for the observed behavior.
- Received 11 December 2022
- Revised 21 February 2023
- Accepted 7 April 2023
DOI:https://doi.org/10.1103/PhysRevB.107.134110
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