Current-induced spin polarization in Janus WSSe monolayer

Sheng-Bin Yu, Shu-Han Sun, Ma Zhou, Dong Zhang, and Kai Chang
Phys. Rev. B 107, 125426 – Published 31 March 2023

Abstract

Janus engineering of transition metal dichalcogenide monolayers breaks the vertical mirror symmetry and induces huge built-in polarization and large Rashba spin-orbit coupling. By performing first-principles calculations, we find that the Rashba spin-orbit coupling induces sizable current-induced spin polarization in both the conduction and valence bands in the Janus WSSe monolayer, which is comparable to that in perovskite oxide interfaces. By constructing the low-energy k·p Hamiltonian from the invariant theory, we find a sign change of the current-spin conductivity at chemical potential μ0.73 eV, which indicates the flip of spin polarization and is attributed to the competition between the intrinsic Rashba spin-orbit coupling and the hexagonal warping of the valence bands. Our numerical and analytic results suggest that the current-induced spin polarization in the Janus WSSe monolayer is insensitive to temperature and impurity concentration but can be effectively tuned by external biaxial or uniaxial strain. The Janus WSSe monolayer could be a promising candidate to realize flexible two-dimensional spintronics devices.

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  • Received 25 November 2022
  • Revised 17 February 2023
  • Accepted 20 March 2023

DOI:https://doi.org/10.1103/PhysRevB.107.125426

©2023 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Sheng-Bin Yu1,2,*, Shu-Han Sun1,2,*, Ma Zhou3, Dong Zhang1,2,*,†, and Kai Chang1,2,‡

  • 1SKLSM, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China
  • 2College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
  • 3Department of Physics, Nanchang University, Nanchang 330031, China

  • *These authors contributed equally to this work.
  • Corresponding author: zhangdong@semi.ac.cn
  • Corresponding author: kchang@semi.ac.cn

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Issue

Vol. 107, Iss. 12 — 15 March 2023

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