Two-dimensional rare-earth Janus 2HGdXY (X,Y=Cl,Br,I; XY) monolayers: Bipolar ferromagnetic semiconductors with high Curie temperature and large valley polarization

Cunquan Li and Yukai An
Phys. Rev. B 107, 115428 – Published 29 March 2023
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Abstract

Two-dimensional (2D) ferromagnetic semiconductors hold great interest due to their potential applications for nanoscale electronic devices. In this paper, the Janus 2HGdXY (X, Y=Cl,Br,I,XY) monolayers with rare-earth element Gd (4f7+5d1) are predicted by first-principles calculations. Small exfoliation energy of less than 0.25 J/m2 and excellent dynamical/thermal stabilities can be confirmed for the Janus 2HGdXY monolayers, which exhibit the bipolar magnetic semiconductor character with high Curie temperatures above 260 K and large spin-orbit coupling effect, and can be further transformed into the half-semiconductor phase under proper tensile strains (5–6%). In addition, in-plane magnetic anisotropy can be observed in the 2H-GdICl and 2H-GdIBr monolayers. On the contrary, the 2H-GdBrCl monolayer exhibits perpendicular magnetic anisotropy character, which originates from the competition between Gd-p/d and halogen atom-p orbitals. Calculated valley optical actions of the Janus 2HGdXY monolayers exhibit distinguished valley-selective circular dichroisms, which is expected to realize the special valley excitation by polarized light. Spontaneously, valley-Zeeman effect in the valance band for the Janus 2HGdXY monolayers induces a giant valley splitting of 60–120 meV, which is also robust against various external biaxial strains. A tunable valley degree of freedom in Janus 2HGdXY systems is very necessary for encoding and processing information.

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  • Received 3 November 2022
  • Revised 8 February 2023
  • Accepted 22 March 2023

DOI:https://doi.org/10.1103/PhysRevB.107.115428

©2023 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Cunquan Li and Yukai An*

  • Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education, Tianjin Key Laboratory for Photoelectric Materials and Devices, National Demonstration Center for Experimental Function Materials Education, School of Material Science and Engineering, Tianjin University of Technology, Tianjin 300384, China

  • *ykan@tjut.edu.cn

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Issue

Vol. 107, Iss. 11 — 15 March 2023

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