Pressure-induced reentrant Dirac semimetallic phases in twisted bilayer graphene

Francisco Sánchez-Ochoa, Alberto Rubio-Ponce, and Florentino López-Urías
Phys. Rev. B 107, 045414 – Published 13 January 2023

Abstract

External hydrostatic pressure (P) is another controllable and clean knob to tune the energy position of van Hove singularities in twisted bilayer graphene (TBLG), besides the interlayer rotation angle (θ). Based on total energy density functional theory calculations, we report here the ground-state properties of high-angle TBLG with two families due to their even and odd sublattice-exchange parity, hereafter parity for simplicity, under vertical hydrostatic P. Even (odd) parity refers to rotate one layer with respect to the other in a bilayer graphene with stacking AA (AB). We observed a Dirac semimetal (0–20 GPa) semiconductor (20–70 GPa) phase transition at θ=21.8 and 13.4; however, a reentrant Dirac semimetallic phase is observed for θ=9.4 and P70 GPa whenever TBLG has even parity. Meanwhile, TBLG systems with odd parity and different θ remain metallic but with an enhanced trigonal warping for P>50 GPa. Indeed, the semiconductor phase is only present for high θ. The phase transition in TBLG with even parity and the metallic character of TBLG with odd parity are due to band inversion effect assisted by a band-to-band repulsion mechanism shown by unfolded bands. This work shows the relevance of external P and parity in TBLG electronic structure and their possible implications in experiments.

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  • Received 10 August 2022
  • Revised 18 November 2022
  • Accepted 22 December 2022

DOI:https://doi.org/10.1103/PhysRevB.107.045414

©2023 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Francisco Sánchez-Ochoa1,*, Alberto Rubio-Ponce2,†, and Florentino López-Urías3,‡

  • 1Departamento de Materia Condensada, Instituto de Física, Universidad Nacional Autónoma de México, Apartado Postal 20-364, Ciudad de México C.P. 01000, Mexico
  • 2Departamento de Ciencias Básicas, Universidad Autónoma Metropolitana-Azcapotzalco- Av. San Pablo 180, Ciudad de México C.P. 02200, Mexico
  • 3Advanced Materials Division, IPICYT, Camino a la Presa San José 2055, Col Lomas 4a sección, San Luis Potosí S.L.P., 78216, Mexico

  • *fsanchez@fisica.unam.mx
  • arp@azc.uam.mx
  • flo@ipicyt.edu.mx

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Issue

Vol. 107, Iss. 4 — 15 January 2023

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