• Letter

Strong Dzyaloshinskii-Moriya interaction in monolayer CrI3 on metal substrates

Fan Zhang, Xueao Li, Yabei Wu, Xiaolong Wang, Jijun Zhao, and Weiwei Gao
Phys. Rev. B 106, L100407 – Published 27 September 2022
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Abstract

Dzyaloshinskii-Moriya interaction (DMI) is the primary mechanism for realizing real-space chiral spin textures, which are regarded as key components for the next-generation spintronics. However, DMI arises from a perturbation term of the spin-orbit interaction and is usually weak in pristine magnetic semiconductors. To date, large DMI and the resulting skyrmions are only realized in a few materials under stringent conditions. Using first-principles calculations, we demonstrate that significant DMI occurs between nearest-neighbor Cr atoms in two-dimensional (2D) magnetic semiconductor CrI3 on Au or Cu substrates. This exceptionally strong DMI is generated by the interfacial charge transfer and weak chemical interactions between chromium halides and metal substrates, which break the spatial inversion symmetry. These findings highlight the significance of substrate effects in 2D magnets and expand the inventory of feasible materials with strong DMI.

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  • Received 27 June 2022
  • Accepted 12 September 2022

DOI:https://doi.org/10.1103/PhysRevB.106.L100407

©2022 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Fan Zhang1, Xueao Li1, Yabei Wu2,3, Xiaolong Wang1, Jijun Zhao1,*, and Weiwei Gao1,†

  • 1Key Laboratory of Material Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian 116024, China
  • 2Department of Materials Science and Engineering and Shenzhen Institute for Quantum Science & Engineering, Southern University of Science and Technology, Shenzhen, Guangdong 518055, China
  • 3Guangdong Provincial Key Lab for Computational Science and Materials Design, and Shenzhen Municipal Key Lab for Advanced Quantum Materials and Devices, Southern University of Science and Technology, Shenzhen, Guangdong 518055, China

  • *Corresponding author: zhaojj@dlut.edu.cn
  • Corresponding author: weiweigao@dlut.edu.cn

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Issue

Vol. 106, Iss. 10 — 1 September 2022

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