Strain-induced shape anisotropy in antiferromagnetic structures

Hendrik Meer, Olena Gomonay, Christin Schmitt, Rafael Ramos, Leo Schnitzspan, Florian Kronast, Mohamad-Assaad Mawass, Sergio Valencia, Eiji Saitoh, Jairo Sinova, Lorenzo Baldrati, and Mathias Kläui
Phys. Rev. B 106, 094430 – Published 26 September 2022

Abstract

We demonstrate how shape-dependent strain can be used to control antiferromagnetic order in NiO/Pt thin films. For rectangular elements patterned along the easy and hard magnetocrystalline anisotropy axes of our film, we observe different domain structures and we identify magnetoelastic interactions that are distinct for different domain configurations. We reproduce the experimental observations by modeling the magnetoelastic interactions, considering spontaneous strain induced by the domain configuration, as well as elastic strain due to the substrate and the shape of the patterns. This allows us to demonstrate and explain how the variation of the aspect ratio of rectangular elements can be used to control the antiferromagnetic ground-state domain configuration. Shape-dependent strain does not only need to be considered in the design of antiferromagnetic devices, but can potentially be used to tailor their properties, providing an additional handle to control antiferromagnets.

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  • Received 25 April 2022
  • Accepted 2 September 2022

DOI:https://doi.org/10.1103/PhysRevB.106.094430

©2022 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Hendrik Meer1,*, Olena Gomonay1, Christin Schmitt1, Rafael Ramos2,3, Leo Schnitzspan1, Florian Kronast4, Mohamad-Assaad Mawass4, Sergio Valencia4, Eiji Saitoh2,5,6,7, Jairo Sinova1,8, Lorenzo Baldrati1, and Mathias Kläui1,9,†

  • 1Institute of Physics, Johannes Gutenberg-University Mainz, 55099 Mainz, Germany
  • 2WPI-Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
  • 3Centro de Investigación en Química Biolóxica e Materiais Moleculares (CIQUS), Departamento de Química-Física, Universidade de Santiago de Compostela, Santiago de Compostela 15782, Spain
  • 4Helmholtz-Zentrum Berlin für Materialien und Energie, Albert-Einstein-Strasse 15, 12489 Berlin, Germany
  • 5Department of Applied Physics, The University of Tokyo, Tokyo 113-8656, Japan
  • 6Center for Spintronics Research Network, Tohoku University, Sendai 980-8577, Japan
  • 7Advanced Science Research Center, Japan Atomic Energy Agency, Tokai 319-1195, Japan
  • 8Institut of Physics, Academy of Sciences of the Czech Republic, Praha 11720, Czech Republic
  • 9Center for Quantum Spintronics, Department of Physics, Norwegian University of Science and Technology, 7034 Trondheim, Norway

  • *meer@uni-mainz.de
  • Klaeui@Uni-Mainz.de

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Issue

Vol. 106, Iss. 9 — 1 September 2022

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