Symmetry of ferroelectric switching and domain walls in hafnium dioxide

Guo-Dong Zhao, Xingen Liu, Wei Ren, Xiaona Zhu, and Shaofeng Yu
Phys. Rev. B 106, 064104 – Published 12 August 2022; Erratum Phys. Rev. B 107, 219902 (2023)
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Abstract

Hafnium dioxide (HfO2) is a promising ferroelectric (FE) material for achieving high-density nonvolatile memory and neuromorphic computing due to its compatibility with the mainstream integrated circuit technology and the surprisingly enhanced ferroelectricity by reduced thickness. The FE switching dynamics is essential to the device performance, but the complexity of HfO2 atomic structure causes unknown of various FE switching paths and domain-wall configurations. Here, we demonstrate that its low-barrier paths and domain walls can be comprehensively found and understood from a perspective of topological symmetry. By discussing pseudochirality and equivalent transformation relations in a crystal with first principles and lattice modes, we classify and analyze 4 low-barrier FE switching paths and 93 irreducible topology domain-wall configurations in HfO2. The anisotropic switching mechanism is inferred based on the investigation for 12 types of 180-side domain walls. This methodology is expected to be generally applicable to displacive ferroelectrics with low unit-cell point-group symmetries and lay a foundation for mechanism study of the switching dynamics.

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  • Received 25 January 2022
  • Revised 19 May 2022
  • Accepted 19 July 2022

DOI:https://doi.org/10.1103/PhysRevB.106.064104

©2022 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Erratum

Erratum: Symmetry of ferroelectric switching and domain walls in hafnium dioxide [Phys. Rev. B 106, 064104 (2022)]

Guo-Dong Zhao, Xingen Liu, Wei Ren, Xiaona Zhu, and Shaofeng Yu
Phys. Rev. B 107, 219902 (2023)

Authors & Affiliations

Guo-Dong Zhao1, Xingen Liu2, Wei Ren3, Xiaona Zhu1,*, and Shaofeng Yu1,4

  • 1School of Microelectronics, Fudan University, Shanghai 200433, China
  • 2School of Mathematical Information, Shaoxing University, Shaoxing 312000, China
  • 3Department of Physics, Shanghai Key Laboratory of High Temperature Superconductors, State Key Laboratory of Advanced Special Steel, International Centre of Quantum and Molecular Structures, Shanghai University, Shanghai 200444, China
  • 4National Integrated Circuit Innovation Center, Shanghai 201204, China

  • *xiaona_zhu@fudan.edu.cn

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Issue

Vol. 106, Iss. 6 — 1 August 2022

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