Suppression of ferromagnetism and influence of disorder in silicon-substituted CeRh6Ge4

Y. J. Zhang, Z. Y. Nie, R. Li, Y. C. Li, D. L. Yang, B. Shen, Y. Chen, F. Du, S. S. Luo, H. Su, R. Shi, S. Y. Wang, M. Nicklas, F. Steglich, M. Smidman, and H. Q. Yuan
Phys. Rev. B 106, 054409 – Published 8 August 2022

Abstract

We report a study of isoelectronic chemical substitution in the recently discovered quantum critical ferromagnet CeRh6Ge4. Upon silicon doping, the ferromagnetic ordering temperature of CeRh6(Ge1xSix)4 is continuously suppressed, and no transition is observed beyond xc0.125. Non-Fermi-liquid behavior with C/Tln(T*/T) is observed close to xc, indicating the existence of strong quantum fluctuations, while the T-linear behavior observed upon pressurizing the parent compound is absent in the resistivity, which is likely a consequence of the disorder induced by silicon doping. Our findings show the effects of disorder on the unusual ferromagnetic quantum criticality in CeRh6Ge4, and provide further evidence for understanding the origin of this behavior.

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  • Received 24 March 2022
  • Revised 30 June 2022
  • Accepted 25 July 2022

DOI:https://doi.org/10.1103/PhysRevB.106.054409

©2022 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Y. J. Zhang1,2,3, Z. Y. Nie2, R. Li2, Y. C. Li4, D. L. Yang4, B. Shen2, Y. Chen2, F. Du2, S. S. Luo2, H. Su2, R. Shi1, S. Y. Wang1, M. Nicklas5, F. Steglich2,5, M. Smidman2,3,*, and H. Q. Yuan2,3,6,7,†

  • 1Institute for Advanced Materials, Hubei Normal University, Huangshi 435002, China
  • 2Center for Correlated Matter and Department of Physics, Zhejiang University, Hangzhou 310058, China
  • 3Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou 310058, China
  • 4Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
  • 5Max Planck Institute for Chemical Physics of Solids, Dresden, Germany
  • 6State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310058, China
  • 7Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China

  • *msmidman@zju.edu.cn
  • hqyuan@zju.edu.cn

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Issue

Vol. 106, Iss. 5 — 1 August 2022

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