Understanding the three-dimensional quantum Hall effect in generic multi-Weyl semimetals

Feng Xiong, Carsten Honerkamp, Dante M. Kennes, and Tanay Nag
Phys. Rev. B 106, 045424 – Published 28 July 2022

Abstract

The quantum Hall effect in three-dimensional Weyl semimetal (WSM) receives significant attention for the emergence of the Fermi loop where the underlying two-dimensional Hall conductivity, namely, sheet Hall conductivity, shows quantized plateaus. In tilt multi-Weyl semimetals (mWSMs) lattice models, we systematically study Landau levels (LLs) and magneto-Hall conductivity both under the parallel and perpendicular magnetic field (referenced to the Weyl node's separation), i.e., Bz and Bx, to explore the impact of tilting and nonlinearity in the dispersion. We make use of two (single) node low-energy models to qualitatively explain the emergence of mid-gap chiral (linear crossing of chiral) LLs on the lattice for Bz (Bx). Remarkably, we find that the sheet Hall conductivity becomes quantized for Bz even when two Weyl nodes project onto a single Fermi point in two opposite surfaces, forming a Fermi loop with kz as the good quantum number. On the other hand, the Fermi loop, connecting two distinct Fermi points on two opposite surfaces, with kx being the good quantum number, causes the quantization in sheet Hall conductivity for Bx. The quantization is almost lost (perfectly remained) in the type-II phase for Bx (Bz). Interestingly, the jump profiles between the adjacent quantized plateaus change with the topological charge for both cases. The momentum-integrated three-dimensional Hall conductivity is not quantized; however, it bears the signature of chiral LLs resulting in the linear dependence on μ for small μ. The linear zone (its slope) reduces (increases) as the tilt (topological charge) of the underlying WSM increases.

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  • Received 27 February 2022
  • Revised 20 June 2022
  • Accepted 21 July 2022

DOI:https://doi.org/10.1103/PhysRevB.106.045424

©2022 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Feng Xiong1, Carsten Honerkamp1, Dante M. Kennes2,3, and Tanay Nag2

  • 1Institute for Theory of Statistical Physics, RWTH Aachen University, and JARA Fundamentals of Future Information Technology, 52062 Aachen, Germany
  • 2Institute for Theoretical Statistical Physics, RWTH Aachen University, and JARA Fundamentals of Future Information Technology, 52062 Aachen, Germany
  • 3Max Planck Institute for the Structure and Dynamics of Matter, Center for Free Electron Laser Science, 22761 Hamburg, Germany

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Issue

Vol. 106, Iss. 4 — 15 July 2022

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