• Letter

Trion-trion annihilation in monolayer WS2

Suman Chatterjee, Garima Gupta, Sarthak Das, Kenji Watanabe, Takashi Taniguchi, and Kausik Majumdar
Phys. Rev. B 105, L121409 – Published 28 March 2022
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Abstract

Strong Coulomb interaction in monolayer transition metal dichalcogenides can facilitate nontrivial many-body effects among excitonic complexes. Many-body effects such as exciton-exciton annihilation have been widely explored in this material system. However, a similar effect for charged excitons (or trions), that is, trion-trion annihilation (TTA), is expected to be relatively suppressed due to repulsive like-charges, and it has not been hitherto observed in such layered semiconductors. By a gate-dependent tuning of the spectral overlap between the trion and the charged biexciton through an “anticrossing”-like behavior in monolayer WS2, here we present an experimental observation of an anomalous suppression of the trion emission intensity with an increase in gate voltage. The results strongly correlate with time-resolved measurements, and they are inferred as direct evidence of a nontrivial TTA resulting from nonradiative Auger recombination of a bright trion, and the corresponding energy resonantly promoting a dark trion to a charged biexciton state. The extracted Auger coefficient for the process is found to be tunable ten-fold through a gate-dependent tuning of the spectral overlap.

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  • Received 14 October 2021
  • Revised 26 February 2022
  • Accepted 9 March 2022

DOI:https://doi.org/10.1103/PhysRevB.105.L121409

©2022 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Suman Chatterjee1, Garima Gupta1, Sarthak Das1, Kenji Watanabe2, Takashi Taniguchi3, and Kausik Majumdar1,*

  • 1Department of Electrical Communication Engineering, Indian Institute of Science, Bangalore 560012, India
  • 2Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-044, Japan
  • 3International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-044, Japan

  • *Corresponding author: kausikm@iisc.ac.in

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Issue

Vol. 105, Iss. 12 — 15 March 2022

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