• Open Access

Statistical limits for entanglement swapping with semiconductor entangled photon sources

Jingzhong Yang, Michael Zopf, Pengji Li, Nand Lal Sharma, Weijie Nie, Frederik Benthin, Tom Fandrich, Eddy P. Rugeramigabo, Caspar Hopfmann, Robert Keil, Oliver G. Schmidt, and Fei Ding
Phys. Rev. B 105, 235305 – Published 23 June 2022
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Abstract

Semiconductor quantum dots are promising building blocks for quantum communication applications. Although deterministic, efficient, and coherent emission of entangled photons has been realized, implementing a practical quantum repeater remains outstanding. Here we explore the statistical limits for entanglement swapping with sources of polarization-entangled photons from the commonly used biexciton-exciton cascade. We stress the necessity of tuning the exciton fine structure, and explain why the often observed time evolution of photonic entanglement in quantum dots is not applicable for large quantum networks. We identify the critical, statistically distributed device parameters for entanglement swapping based on two sources. A numerical model for benchmarking the consequences of device fabrication, dynamic tuning techniques, and statistical effects is developed, in order to bring the realization of semiconductor-based quantum networks one step closer to reality.

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  • Received 28 September 2021
  • Revised 9 May 2022
  • Accepted 27 May 2022

DOI:https://doi.org/10.1103/PhysRevB.105.235305

Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.

©2022 American Physical Society

Physics Subject Headings (PhySH)

  1. Physical Systems
Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Jingzhong Yang1,*, Michael Zopf1,*, Pengji Li1,*, Nand Lal Sharma2, Weijie Nie2, Frederik Benthin1, Tom Fandrich1, Eddy P. Rugeramigabo1, Caspar Hopfmann2, Robert Keil2,†, Oliver G. Schmidt2,3,4, and Fei Ding1,5,‡

  • 1Institut für Festkörperphysik, Leibniz Universität Hannover, Appelstraße 2, 30167 Hannover, Germany
  • 2Institute for Integrative Nanosciences, Leibniz IFW Dresden, Helmholtzstraße 20, 01069 Dresden, Germany
  • 3Material Systems for Nanoelectronics, Technische Universität Chemnitz, 09107 Chemnitz, Germany
  • 4Nanophysics, Faculty of Physics and Würzburg-Dresden Cluster of Excellence ct.qmat, TU Dresden, 01062 Dresden, Germany
  • 5Laboratorium für Nano- und Quantenengineering, Leibniz Universität Hannover, Schneiderberg 39, 30167 Hannover, Germany

  • *Contributed equally to this work.
  • Present address: Fraunhofer-Institut für Angewandte Festkörperphysik (IAF), Tullastraße 72, 79108 Freiburg, Germany.
  • fei.ding@fkp.uni-hannover.de

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Issue

Vol. 105, Iss. 23 — 15 June 2022

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