Gate-controlled proximity magnetoresistance in In1xGaxAs/(Ga,Fe)Sb bilayer heterostructures

Kosuke Takiguchi, Kyosuke Okamura, Le Duc Anh, and Masaaki Tanaka
Phys. Rev. B 105, 235202 – Published 21 June 2022

Abstract

The magnetic proximity effect (MPE), ferromagnetic (FM) coupling at the interface of magnetically dissimilar layers, has attracted much attention as a promising pathway for introducing ferromagnetism into a high-mobility nonmagnetic (NM) conducting channel. Recently, our group found giant proximity magnetoresistance (PMR), which is caused by MPE at an interface between a NM semiconductor InAs quantum well (QW) layer and a FM semiconductor (Ga,Fe)Sb layer. The MPE in the NM semiconductor can be modulated by applying a gate voltage and controlling the penetration of the electron wave function in the InAs QW into the neighboring insulating FM (Ga,Fe)Sb layer. However, optimal conditions to obtain strong MPE at the InAs/(Ga,Fe)Sb interface have not been clarified. In this paper, we systematically investigate the PMR properties of In1xGaxAs (x=0, 5, 7.5, and 10%)/(Ga,Fe)Sb bilayer semiconductor heterostructures under a wide range of gate voltage. The inclusion of Ga alters the electronic structures of the InAs thin film, changing the effective mass and the QW potential of electron carriers. Our experimental results and theoretical analysis of the PMR in these In1xGaxAs/(Ga,Fe)Sb heterostructures show that the MPE depends not only on the degree of penetration of the electron wave function into (Ga,Fe)Sb but also on the electron density. These findings help us to unveil the microscopic mechanism of MPE in semiconductor-based NM/FM heterojunctions.

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  • Received 15 December 2021
  • Revised 10 May 2022
  • Accepted 11 May 2022

DOI:https://doi.org/10.1103/PhysRevB.105.235202

©2022 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Kosuke Takiguchi1, Kyosuke Okamura1, Le Duc Anh1,2,3,4,*, and Masaaki Tanaka1,4,5,†

  • 1Department of Electrical Engineering and Information Systems, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656, Japan
  • 2Institute of Engineering Innovation, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656, Japan
  • 3PRESTO, Japan Science and Technology Agency, Kawaguchi, Saitama 332-0012, Japan
  • 4Center for Spintronics Research Network (CSRN), The University of Tokyo, Bunkyo-ku, Tokyo 113-8656, Japan
  • 5Institute for Nano Quantum Information Electronics, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505, Japan

  • *anh@cryst.t.u-tokyo.ac.jp
  • masaaki@ee.t.u-tokyo.ac.jp

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Issue

Vol. 105, Iss. 23 — 15 June 2022

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