Abstract
The transition in irradiated GaAs observed in deep level transient spectroscopy (DLTS) was recently discovered in Laplace-DLTS to encompass three distinct components. The component designated was found to be metastable, reversibly bleached under minority carrier (hole) injection, with an introduction rate dependent upon Si doping density. It is shown through first-principles modeling that the must be the intimate Si-vacancy pair, best described as a Si sitting in a divacancy . The bleached metastable state is enabled by a doubly site-shifting mechanism: Upon recharging, the defect undergoes a second site shift rather returning to its original -active configuration via reversing the first site shift. Identification of this defect offers insights into the short-time annealing kinetics in irradiated GaAs.
- Received 5 April 2022
- Accepted 10 June 2022
DOI:https://doi.org/10.1103/PhysRevB.105.224111
Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.
Published by the American Physical Society