Abstract
Using controlled ferromagnet (FM) -semiconductor (SC) interfaces in SC-based lateral spin-valve (LSV) devices, we experimentally study the effect of interfacial spin moments in FM–SC heterojunctions on spin transport in SC. First-principles calculations predict that the spin moment of FM–SC junctions can be artificially reduced by inserting transition metal V, Cr, or Cu atomic layers between FM and SC. When all-epitaxial FM–SC Schottky-tunnel contacts with a -nm-thick V, Cr, or Cu interfacial layer are formed, we find that the spin signals in FM–SC LSV devices are significantly decreased at 8 K. When we increase the interfacial spin moment by inserting an -nm-thick Co layer between FM and SC, the spin signals at 8 K are significantly enhanced again. From these experiments, we conclude that the interfacial spin moments at FM–SC interfaces are one of the important factors to achieve large spin signals even in SC-based spintronic devices.
- Received 10 February 2022
- Revised 25 April 2022
- Accepted 27 April 2022
DOI:https://doi.org/10.1103/PhysRevB.105.195308
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