Photoneutralization of charges in GaAs quantum dot based entangled photon emitters

Jingzhong Yang, Tom Fandrich, Frederik Benthin, Robert Keil, Nand Lal Sharma, Weijie Nie, Caspar Hopfmann, Oliver G. Schmidt, Michael Zopf, and Fei Ding
Phys. Rev. B 105, 115301 – Published 3 March 2022; Erratum Phys. Rev. B 109, 119903 (2024)

Abstract

Semiconductor-based emitters of pairwise photonic entanglement are a promising constituent of photonic quantum technologies. They are known for the ability to generate discrete photonic states on-demand with low multiphoton emission, near-unity entanglement fidelity, and high single photon indistinguishability. However, quantum dots typically suffer from luminescence blinking, lowering the efficiency of the source and hampering their scalable application in quantum networks. In this paper, we investigate and adjust the intermittence of the neutral exciton emission in a GaAs/AlGaAs quantum dot under two-photon resonant excitation of the neutral biexciton. We investigate the spectral and quantum optical response of the quantum dot emission to an additional wavelength tunable gate laser, revealing blinking caused by the intrinsic Coulomb blockade due to charge capture processes. Our finding demonstrates that the emission quenching can be actively suppressed by controlling the balance of free electrons and holes in the vicinity of the quantum dot and thereby significantly increasing the quantum efficiency by 30%.

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  • Received 11 October 2021
  • Revised 11 February 2022
  • Accepted 14 February 2022

DOI:https://doi.org/10.1103/PhysRevB.105.115301

©2022 American Physical Society

Physics Subject Headings (PhySH)

  1. Physical Systems
Quantum Information, Science & TechnologyCondensed Matter, Materials & Applied Physics

Erratum

Erratum: Photoneutralization of charges in GaAs quantum dot based entangled photon emitters [Phys. Rev. B 105, 115301 (2022)]

Jingzhong Yang, Tom Fandrich, Frederik Benthin, Robert Keil, Nand Lal Sharma, Weijie Nie, Caspar Hopfmann, Oliver G. Schmidt, Michael Zopf, and Fei Ding
Phys. Rev. B 109, 119903 (2024)

Authors & Affiliations

Jingzhong Yang1,*, Tom Fandrich1,*, Frederik Benthin1,*, Robert Keil2,†, Nand Lal Sharma2, Weijie Nie2, Caspar Hopfmann2, Oliver G. Schmidt2,3,4, Michael Zopf1,‡, and Fei Ding1,5,§

  • 1Institut für Festkörperphysik, Leibniz Universität Hannover, Appelstraße 2, 30167 Hannover, Germany
  • 2Institute for Integrative Nanosciences, Leibniz IFW Dresden, Helmholtzstraße 20, 01069 Dresden, Germany
  • 3Material Systems for Nanoelectronics, Technische Universität Chemnitz, 09107 Chemnitz, Germany
  • 4Nanophysics, Faculty of Physics and Würzburg-Dresden Cluster of Excellence ct.qmat, TU Dresden, 01062 Dresden, Germany
  • 5Laboratorium für Nano- und Quantenengineering, Leibniz Universität Hannover, Schneiderberg 39, 30167 Hannover, Germany

  • *These authors contributed equally to this work.
  • Present address: Fraunhofer-Institut für Angewandte Festkörperphysik (IAF), Tullastraße 72, 79108 Freiburg, Germany.
  • michael.zopf@fkp.uni-hannover.de
  • §fei.ding@fkp.uni-hannover.de

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Issue

Vol. 105, Iss. 11 — 15 March 2022

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